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Wafer-Level Power device Burn-in Test Handler

Wafer-Level Power device Burn-in Test Handler

It is the latest wafer-level burn in test system designed for power devices This innovative tester accommodates 2 wafer test parallelism 480 die test parallelism per wafer. Independent driver channels for Simultaneous voltage/current measurement as well as temperature monitoring. Designed with a seal chamber to accommodate inert gas such as nitrogen and arc suppression gasses. It protects the DUTs from arc & Oxidation while keeping the tester in an operational
temperature state without overheating.

  • Incorporated with fully automated handlers
  • All in one solution with built-in test chambers
  • High-level User Defined Burn-in Profile (Continuous or Pulse Mode)
  • Integrated with Nitrogen Gas Cooling System
  •  Easy Load & Unloading of Substrate Tiles
  • Programmable Temperature Profile
  • Input/Output: Wafer
  • UPH is up to 720 units
  • Burn-In duration is Programmable
  • Drain Voltage Sourcing: Up to 3,000V DC
  • Test Parameters Vth, IGSS, IDSS, VDSon
  • Leakage Current Measurement Accuracy: 1%
  • Temperature Rise Time: 15 minutes (based on room temp to 150 C)
  • Temperature Tolerance +5°C

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